发明名称 CHARGED PARTICLE BEAM DEVICE AND METHOD OF MANUFACTURE OF SAMPLE
摘要 A precision of removal of a damaged layer (202) of a sample (101) created by machining with an FIB machining device depends on a skill of an operator. During removal machining of the damaged layer (202) generated by an ion beam (105), transmitted electrons which are generated by irradiating an electron beam (111) formed in an electron beam optics system (112) onto a sample (101) are detected by a two-dimensional detector (117), and a moment for finishing the removal machining of the damaged layer (202) is determined based on the amount of blur of a diffraction pattern (208, 301) acquired with the two-dimensional detector (117).
申请公布号 EP2660846(A4) 申请公布日期 2015.01.21
申请号 EP20110853766 申请日期 2011.12.08
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 NANRI TERUTAKA;TOMIMATSU SATOSHI;AGEMURA TOSHIHIDE
分类号 H01J37/317;H01J37/22;H01J37/244;H01J37/28;H01J37/304;H01J37/305 主分类号 H01J37/317
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