| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor element that can reduce interface level density by improving the quality of the interface between silicon carbide and an insulating film formed on the silicon carbide and the quality of the insulating film, and to provide a method of manufacturing an electronic device. <P>SOLUTION: A main surface of a silicon carbide substrate 1 is surface-treated with a cleaning gas containing a hydrogen gas, and then the main surface is surface-treated with a nitrogen-containing gas to form an insulating film 2 on the main surface. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
