| 摘要 |
<p>In a method of forming a fine pattern for a semiconductor device, a photoresist layer which includes an acid removing agent containing layer and a latent acid is formed on a substrate. After a part of the photoresist layer is exposed, an insoluble polymer thin film is formed between the d removing agent containing layer and the exposure region of the photoresist layer. A spacer which exposes the insoluble polymer thin film in an exposure region by developing the photoresist layer and a photoresist pattern integrally connected to the insoluble polymer thin film are formed. The insoluble polymer thin film is removed. The acid removing agent containing layer is removed, thereby forming a fine pattern.</p> |
