| 摘要 |
A solectron field effect transistor (SFET) is described in which the current carrier is a solectron, a coherent particle formed from a lattice distortion and an extra electron or hole, which travels at a constant velocity, independent of applied field, around the sound velocity. The SFET can work with a sub nanosecond response time. Compared to the silicon FET, the SFET can work at lower current and at smaller supply voltages, and has a smaller output impedance, and a smaller input capacity. An inverter (Fig. 5) is described, made from two SFETs which can work with a sub nanosecond response time. Compared to an inverter made from two silicon FETs, the SFET inverter can work at lower supply voltage, lower current, and at lower switching energy. The SFET can reduce the energy consumption of computation, and of electronic communication devices. |
