METALLORGANISCHES GASPHASEN-EPITAXIEWACHSTUM VON II-VI-HALBLEITERMATERIALIEN.

摘要

A process to produce one or more Group II-VI epitaxial layers over a crystalline substrate by directing flows of one or more Group II components and a Group VI metalorganic vapor to a heated substrate whereby the vapors thereby react to form the epitaxial layer(s), is improved in terms of lower reaction temperatures and higher product quality if, as the Group VI metalorganic vapor source, there is used a tellurium compound of the formula: wherein R<1> and R<2> are, independently, hydrogen or C1-C4 alkyl, preferably, hydrogen.