发明名称 |
RESISTANCE CHANGE MEMORY |
摘要 |
A resistance change memory device with a high ON/OFF ratio can be provided. A resistance change memory device according to an embodiment includes a first electrode containing a first element, a resistance change layer provided on the first electrode and containing an oxide of the first element, an oxygen conductive layer provided on the resistance change layer, containing a second element and oxygen, having oxygen ion conductivity, and having a relative permittivity higher than a relative permittivity of the resistance change layer, and a second electrode provided on the oxygen conductive layer. The resistance change layer undergoes dielectric breakdown earlier than the oxygen conductive layer when a voltage between the first electrode and the second electrode is continuously increased from zero. |
申请公布号 |
EP2827367(A1) |
申请公布日期 |
2015.01.21 |
申请号 |
EP20130761116 |
申请日期 |
2013.03.12 |
申请人 |
TOKYO INSTITUTE OF TECHNOLOGY;TOSHIBA MATERIALS CO., LTD. |
发明人 |
KAKUSHIMA, KUNIYUKI;DOU, CHUNMENG;AHMET, PARHAT;IWAI, HIROSHI;KATAOKA, YOSHINORI |
分类号 |
H01L27/105;H01L45/00;H01L49/00 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|