METHOD OF FABRICATING VERTICAL GAN TRANSISTER

摘要

A method of fabricating a vertical GaN transistor includes: a step of forming a mask layer pattern on a first GaN layer, a step of forming a second GaN layer on the first GaN layer exposed by the mask layer pattern, a step of forming a third GaN layer on the second GaN layer, a step of forming a forth GaN layer on the third GaN layer, a step of forming a current blocking layer pattern on the forth GaN layer, a step of forming a fifth GaN layer on the exposed surface of the forth GaN layer and the current blocking layer pattern, and a step of forming a sixth GaN layer on the fifth GaN layer.