| 摘要 |
<p>Provided is a novel Cu wiring film having improved adhesiveness to a substrate. The Cu wiring film has a Cu oxide formed on a glass substrate, and has a strength ratio of Cu(111)/Cu2O(111) within a range of 0.8-2.5, wherein, Cu(111) is an X-ray diffraction peak strength of a (111) plane of a Cu main crystal plane, and Cu2O(111) is an X-ray diffraction peak strength of a (111) plane of a Cu2O main crystal plane. The Cu wiring film preferably has a film thickness of 200-500nm.</p> |
