发明名称 SENSE AMPLIFIER LAYOUT FOR FINFET TECHNOLOGY
摘要 A sense amplifier (SA) includes a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, an SA enabling device, and a sense amplifier enabling signal (SAE) line. The pair of SA sensing devices has the same poly gate length (Lg) as the SA enabling device, and they all share the same OD region. When enabled, an SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier.
申请公布号 KR20150007914(A) 申请公布日期 2015.01.21
申请号 KR20130147445 申请日期 2013.11.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHEN YEN HUEI;TIEN CHIEN CHI;LIN KAO CHENG;CHEN JUNG HSUAN
分类号 G11C11/413;G11C7/06 主分类号 G11C11/413
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