发明名称 THIN FILM DEPOSITION APPARATUS
摘要 In a thin film deposition apparatus, a vapor generation source including a crucible containing a desposition material is disposed inside an ionization means, the crucible being disposed below a cathode filament. Since the upper section of the crucible is heated by the heat of the filament, the creeping up of a molten metal deposition material having a good wettability can be suppressed. Also, the temperature of a surrounding anode is maintained higher than the melting point of the deposition material because the crucible disposed in the ionization means is heated. Therefore, the deposition of the material onto the anode can be prevented.
申请公布号 US5180477(A) 申请公布日期 1993.01.19
申请号 US19910718367 申请日期 1991.06.20
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ITO, HIROKI
分类号 C23C14/32;C23C14/22;H01J27/14;H01L21/203 主分类号 C23C14/32
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