| 摘要 |
A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio. |
