SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a first power rail which receives a first voltage, a first source electrode which is connected to a first impurity region, a second power rail which receives a second voltage different from the first voltage, a second source electrode connected to a second impurity region, a gate electrode extended in a first direction on the first and the second impurity region, a first drain electrode formed on the first impurity region, a second drain electrode formed on the second impurity region, and a connection line which is connected to the first drain and the second drain and forms a closed loop.