| 发明名称 |
SEMICONDUCTOR COMPONENT |
| 摘要 |
<p>A semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5) applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the electrodes (4, 5) through the semiconductor substrate (3).</p> |
| 申请公布号 |
EP2697830(B1) |
申请公布日期 |
2015.01.21 |
| 申请号 |
EP20120715825 |
申请日期 |
2012.03.29 |
| 申请人 |
FRIEDRICH-ALEXANDER-UNIVERSITÄT ERLANGEN-NÜRNBERG |
发明人 |
WEBER, HEIKO, B.;KRIEGER, MICHAEL;HERTEL, STEFAN;KRACH, FLORIAN;JOBST, JOHANNES;WALDMANN, DANIEL |
| 分类号 |
H01L29/45;H01L29/16;H01L29/78 |
主分类号 |
H01L29/45 |
| 代理机构 |
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代理人 |
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