Semiconductor light emitting device and method for manufacturing the same

摘要

According to one embodiment, a semiconductor light emitting device (110) includes a first semiconductor layer (20), a second semiconductor layer (50) and a light emitting layer (40). The second semiconductor layer (50) is provided on a [0001]-direction side of the first semiconductor layer (20). The light emitting layer (40) includes a first well layer (42a), a second well layer (42b) and a first barrier layer (41a). An In composition ratio of the barrier layer (41a) is lower than that of the first well layer (42a) and the second well layer (42b). The barrier layer (41a) includes a first portion (411) and a second portion (412). The second portion (412) has a first region (412a) and a second region (412b). The first region (412a) has a first In composition ratio higher than that of the first portion (411). The second region (412b) is provided between the first region (412a) and the first well layer (42a). The second region (412b) has a second In composition ratio lower than the first In composition ratio.