| 摘要 |
<p>The present technique relates to a phase change random access memory device and a method of manufacturing the same. A phase change random access memory device according to the present technique includes: a multiple insulating layer which includes multiple holes formed in the upper part of a semiconductor substrate; a lower electrode formed on the lower surface of the holes; a first spacer formed on the side wall of the holes of the upper part of the lower electrode; a second spacer formed on the upper side of the first spacer; a third spacer formed on the lower part of the second spacer and the lower side wall of the first spacer; a phase change material layer which is formed in the upper part of the lower electrode and is lower than the upper surface of the holes; and an upper electrode which fills the holes in the upper part of the phase change material layer.</p> |
