发明名称 CU-CO-SI-BASED COPPER ALLOY STRIP FOR ELECTRON MATERIAL, AND METHOD FOR MANUFACTURING SAME
摘要 Cu-Co-Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass% of Co, 0.1-0.7 mass% of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied. (a) A diffraction peak height at ß angle 120° among diffraction peak intensities by ß scanning at ±=25° in a {200} pole figure is at least 10 times that of standard copper powder.
申请公布号 KR101485277(B1) 申请公布日期 2015.01.21
申请号 KR20137014528 申请日期 2012.03.15
申请人 发明人
分类号 C22C9/06;C22C9/10;C22F1/08;H01B1/02 主分类号 C22C9/06
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