Contact formation for ultra-scaled devices

摘要

Embodiments of the invention provide approaches for forming gate and source/drain (S/D) contacts. Specifically, the semiconductor device includes a gate transistor formed over a substrate, a S/D contact formed over a trench-silicide (TS) layer and positioned adjacent the gate transistor, and a gate contact formed over the gate transistor, wherein at least a portion of the gate contact is aligned over the TS layer. This structure enables contact with the TS layer, thereby decreasing the distance between the gate contact and the source/drain, which is desirable for ultra-area-scaling.

主权项

1. A method of forming a device, the method comprising:
forming a gate transistor over a substrate; forming a source/drain (S/D) contact over a trench-silicide (TS) layer formed adjacent the gate transistor; and forming a gate contact over the gate transistor, wherein at least a portion of the gate contact is positioned over the TS layer.