Passivation of group III-nitride heterojunction devices

摘要

Passivation of group III-nitride heterojunction devices is described herein. The passivation facilitates simultaneous realization of effective/high current collapse suppression and low leakage current without the use of a sophisticated multiple-field plate technique. The passivation can be achieved by growing a charge-polarized AlN thin film on the surface of a group III-nitride based heterojunction device by plasma-enhanced atomic layer deposition such that positive polarization charges are induced at the interface to compensate for a majority of negative charges at the interface.

主权项

1. An apparatus, comprising:
a group III-nitride heterojunction device; and a charge-polarized aluminum nitride (AlN) film on the surface of the group III-nitride heterojunction device, wherein the interface between the group III-nitride heterojunction device and the charge-polarized AlN film comprises a density of positive polarization charges on an order of at least about 1013 cm−2.