| 发明名称 |
Method of manufacturing semiconductor lasers |
| 摘要 |
Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate. |
| 申请公布号 |
US8936951(B2) |
申请公布日期 |
2015.01.20 |
| 申请号 |
US201313776428 |
申请日期 |
2013.02.25 |
| 申请人 |
Electronics and Telecommunications Research Institute |
发明人 |
Kim In Gyoo;Kim Gyungock;Kim Sang Hoon;Jang Ki Seok;Joo JiHo |
| 分类号 |
H01L21/00;H01S5/30;H01S5/026;H01S5/32;G02B6/12;H01S5/02;H01S5/042 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor laser, the method comprising:
providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate. |
| 地址 |
Daejeon KR |
