发明名称 Liquid crystal display
摘要 A liquid crystal display (LCD) includes a pixel unit having pixels, each of the pixels positioned at a corresponding intersection of gate lines and data lines. A drive circuit unit is positioned at one side of the pixel unit to supply driving signals to the gate lines and the data lines. Test pads are connected to the data lines. In the LCD, each of the data lines is electrically connected between the pixel unit and the drive circuit unit via one or more lines among a first line formed in a first layer and a second line formed in a second layer, and wherein each of the data lines is connected to a different test pad from the test pad connected to adjacent data lines in each of the first and second layers.
申请公布号 US8937485(B2) 申请公布日期 2015.01.20
申请号 US201012981006 申请日期 2010.12.29
申请人 Samsung Display Co., Ltd. 发明人 Kim Jung-Yun;Kim Chul-Ho;Lee Dong-Hoon;Park Gyung-Soon;Lee Seung-Kyu
分类号 G01R31/26;G09G3/36 主分类号 G01R31/26
代理机构 Knobbe Martens Olson & Bear LLP 代理人 Knobbe Martens Olson & Bear LLP
主权项 1. A liquid crystal display (LCD) comprising: a pixel unit having pixels, each of the pixels positioned at a corresponding intersections of gate lines and data lines; a drive circuit unit positioned at one side of the pixel unit to supply driving signals to the gate lines and the data lines; and test pads connected to the data lines, wherein each of the data lines is electrically connected between the pixel unit and the drive circuit unit via one or more lines among a first line formed in a first layer and a second line formed in a second layer, and wherein each of the data lines is connected to a different test pad from a test pad connected to adjacent data lines in each of the first and second layers, wherein each of the pixels has a thin film transistor comprising: a semiconductor layer;a gate electrode formed on the semiconductor layer with a gate insulting layer interposed therebetween; andsource and drain electrodes formed on the gate electrode with an interlayer insulating layer interposed therebetween and connected to the semiconductor layer, wherein the first line is formed of the same material and in the same layer as the gate electrode, and wherein the second line is formed of the same material and in the same layer as the source and drain electrodes.
地址 Yongin KR