Semiconductor devices comprising GSG interconnect structures

摘要

Semiconductor devices and methods of manufacture thereof are disclosed. In an embodiment, a method of manufacturing a semiconductor device includes forming a first conductive structure over a workpiece in a first metallization layer, the first conductive structure including a first portion having a first width and a second portion having a second width. The second width is different than the first width. The method includes forming a second conductive structure in a second metallization layer proximate the first metallization layer, and coupling a portion of the second conductive structure to the first portion of the first conductive structure.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a first conductive structure over a workpiece in a first metallization layer, the first conductive structure including a first signal interconnect having a first width and a first ground interconnect electrically isolated from the first signal interconnect and having a second width; forming a second conductive structure in a second metallization layer proximate the first metallization layer, the second conductive structure including a second signal interconnect and a second ground interconnect electrically isolated from the second signal interconnect; coupling the second signal interconnect to the first signal interconnect by a first via disposed in a third metallization layer, the third metallization layer being disposed between the first metallization layer and the second metallization layer, the first via having a width smaller than the first width; and coupling the second ground interconnect to the first ground interconnect by a second via disposed in the third metallization layer, the second via having a width smaller than the second width.