Sputtering target and manufacturing method thereof, and transistor

摘要

One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

主权项

1. A manufacturing method of a sputtering target, comprising:
mixing and baking a plurality of metal oxides to form a sintered body; performing a mechanical processing on the sintered body so as to form a target; cleaning the target; and performing a heat treatment on the cleaned target.