| 发明名称 | Finding optimal read thresholds and related voltages for solid state memory | ||
| 摘要 | An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value associated with stored values. Two points having ratios closest to the expected value are selected from the set. A voltage is determined based at least in part on the selected two points and the expected value. | ||
| 申请公布号 | US8937838(B2) | 申请公布日期 | 2015.01.20 |
| 申请号 | US201213691113 | 申请日期 | 2012.11.30 |
| 申请人 | SK hynix memory solutions inc. | 发明人 | Tang Xiangyu;Zeng Lingqi;Bellorado Jason;Lee Frederick K. H.;Subramanian Arunkumar |
| 分类号 | G11C11/34;G11C16/26 | 主分类号 | G11C11/34 |
| 代理机构 | Van Pelt, Yi & James LLP | 代理人 | Van Pelt, Yi & James LLP |
| 主权项 | 1. A system, comprising: a storage read interface; and a voltage calculator configured to: obtain an expected value associated with stored values in solid state storage;obtain a set of three or more points, wherein the three or more points include a voltage and a value associated with stored values;select, from the set, two points having ratios closest to the expected value; anddetermine a voltage based at least in part on the selected two points and the expected value. | ||
| 地址 | San Jose CA US | ||