Sensor and method using the same

摘要

A sensor, including a plurality of photo gate pairs on a semiconductor substrate, each of the photo gate pairs including a first photo gate and a second photo gate, a first shared floating diffusion region in the semiconductor substrate, and a plurality of first transmission transistors on the semiconductor substrate, wherein each of the plurality of first transmission transistors is adapted to transmit charges to the first shared floating diffusion region in response to a first transmission control signal, the charges being generated in the semiconductor substrate under the first photo gate of each of the plurality of photo gate pairs.

主权项

1. A sensor, comprising:
a plurality of photo gate pairs on a semiconductor substrate, each of the photo gate pairs defining one sensing unit and including a first photo gate adjacent to a second photo gate; a first shared floating diffusion region in the semiconductor substrate, the first shared floating diffusion region being shared by first photo gates of different photo gate pairs; a second shared floating diffusion region being electrically separated from the first shared floating diffusion region in the semiconductor substrate, each second shared floating diffusion region being shared by second photo gates of the different photo gate pairs; and a plurality of first transmission transistors on the semiconductor substrate, wherein each of the plurality of first transmission transistors is adapted to transmit charges to the first shared floating diffusion region in response to a first transmission control signal, the charges being generated in the semiconductor substrate under the first photo gate of each of the plurality of photo gate pairs.