发明名称 Lithographic apparatus and device manufacturing method with radiation beam inspection using moveable reflecting device
摘要 A lithographic apparatus can include the following devices: a patterning system, a projection system, and a radiation beam inspection device. The patterning system can be configured to provide a patterned radiation beam. The projection system can be configured to project the patterned radiation beam onto a target portion of a substrate. Further, the radiation beam inspection device can be configured to inspect at least a part of the patterned radiation beam. In a substrate exposure position, the projection system is configured to expose a pattern of radiation on the substrate using the patterned radiation beam and the radiation beam device is configured to move the reflecting device away from a light path of the patterned radiation beam. In a radiation beam inspection position, the radiation beam inspection device is configured to move the reflecting device into the light path of the patterned radiation beam.
申请公布号 US8937705(B2) 申请公布日期 2015.01.20
申请号 US200912437009 申请日期 2009.05.07
申请人 ASML Netherlands B.V. 发明人 Tel Wim Tjibbo;Van Der Laan Hans;Owen Cassandra May;Davis Todd J.;Hiar Todd David;Paxton Theodore Allen
分类号 G03B27/68;G03F7/20 主分类号 G03B27/68
代理机构 Sterne, Kessler, Goldstein & Fox P.L.L.C. 代理人 Sterne, Kessler, Goldstein & Fox P.L.L.C.
主权项 1. A lithographic apparatus, comprising: a patterning system configured to provide a patterned radiation beam; a projection system configured to project the patterned radiation beam onto a target portion of a substrate; a radiation beam inspection device comprising a sensor and a reflecting device and configured to inspect at least a part of the patterned radiation beam; a required pattern data store configured to store data corresponding to at least a part of a required pattern corresponding to a pattern feature to be exposed on the substrate; and a controller device configured to: cause the lithographic apparatus to expose the required pattern onto the target portion of the substrate;cause the lithographic apparatus to move between a radiation beam inspection position for inspection of the patterned radiation beam by the radiation beam inspection device and a substrate exposure position; anddetermine a difference between the pattern detected by the radiation beam inspection device with the required pattern and to determine at least one modification to an operation of the lithographic apparatus necessary in order to minimize the difference.
地址 Veldhoven NL