Planarizing method

摘要

According to one embodiment, a planarizing method is proposed. In the planarizing method, a surface to be processed of an object to be processed including a silicon oxide film is planarized in a processing solution by bringing the surface to be processed into contact with or close proximity with the surface of a solid-state plate on which fluorine is adsorbed. The bonding energy between fluorine and the solid-state plate is lower than that between fluorine and silicon.

主权项

1. A method for chemically planarizing a silicon oxide containing surface of an object to be processed, the method comprising:
immersing the silicon oxide containing surface and an ion exchanger on which fluorine is absorbed into a processing fluid, wherein bonding energy between fluorine and the ion exchanger, bonding energy between fluorine and silicon, and bonding energy between anions contained in the processing solution and the ion exchanger, are such that a planarizing chemical reaction occurs without mechanical polishing when the silicon oxide containing surface is placed in contact with or close proximity to the ion exchanger; and placing the silicon oxide containing surface in contact with or close proximity to the ion exchanger, thereby initiating the planarizing reaction between the fluorine on the surface of the ion exchanger and the silicon oxide containing surface.