STRAIN MULTIPLE QUANTUM WELL SEMICONDUCTOR LASER

摘要

PURPOSE:To provide a distortion multiple quantum well semiconductor laser which enables rapid operation without generating transfer inside an active layer. CONSTITUTION:The device is a distortion multiple quantum well semiconductor laser which is formed of an n-type In0.76Ga0.24As0.55P0.45 waveguide layer 102, a nondoped In0.7Ga0.3As/In0.76Ga0.24As0.55P0.45 distortion multiple quantum well active layer 103 and a p-type InP clad layer 104 on an n-type InP substrate 101. The distortion multiple quantum well active layer 103 consists of a ten-layer 3nm-thick In0.7Ga0.3As distortion well layer 114 and an In0.76Ga0.24As0.55P0.45 barrier layer. A barrier layer which is a fifth layer from the substrate 101 is a 30nm-thick distortion absorbing layer 115, and eight-layer barrier layer excepting it is 10nm-thick. According to this constitution, it is possible to readily acquire a semiconductor laser which is free from transfer into the active layer 103 and deterioration of injection efficiency of a hole and enables rapid operation.