| 摘要 |
PURPOSE:To form an electrode which displays a good ohmic characteristic at a low resistance by a method wherein an ohmic electrode composed of an Ni layer and an Al layer is formed on the surface of a group IV semiconductor layer containing carbon. CONSTITUTION:In a silicon carbide light-emitting element, an n-type silicon carbide layer 12 and a p-type silicon carbide layer 13 are laminated sequentially on one main face 11a of an n-type silicon carbide substrate 11 by an LPE method. Then, an Al-Si layer 14 is formed on the p-type silicon carbide layer 13 by a vacuum deposition method, and an Ni film 15 is formed on another main face 11b of the n-type silicon carbide layer 11 in the same manner by a vacuum deposition method. After that, a heat treatment is executed in an inert atmosphere, the Al-Si film 14 is alloyed with the p-type silicon carbide layer 13, the Ni film 15 is alloyed with the n-type silicon carbide substrate 11, and an electrode which displays a good ohmic characteristic is formed. After that, the Ni ohmic electrode film 15 is immersed in a phosphoric acid- based solution and, after that, an Al electrode film 16 is applied by a vacuum deposition method. |
