Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material

摘要

Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

主权项

1. A method of forming a capacitor, comprising:
forming a titanium nitride material within at least one aperture defined by a support material; forming a ruthenium material over the titanium nitride material within the at least one aperture; oxidizing a portion of the ruthenium material to a ruthenium oxide material; forming a first electrode comprising a conductive material over the ruthenium oxide material within the at least one aperture, the ruthenium material laterally surrounding the conductive material and the ruthenium oxide material laterally adjacent the first electrode; oxidizing the titanium nitride material to a rutile titanium dioxide material, the rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and forming a second electrode comprising a conductive material over a surface laterally adjacent to the rutile titanium dioxide material, wherein a major longitudinal portion of the capacitor is not surrounded by a solid material.