Integrated circuits comprising an active transistor electrically connected to a trench capacitor by an overlying contact

摘要

An integrated circuit includes an active transistor laterally adjacent to a trench capacitor formed in a semiconductor substrate, the active transistor comprising a source junction and a drain junction, wherein a barrier layer is disposed along a periphery of the trench capacitor for isolating the trench capacitor; a passive transistor laterally spaced from the active transistor, wherein at least a portion of the trench capacitor is interposed between the active and passive transistors; an interlevel dielectric disposed upon the active and passive transistors; and a first conductive contact extending through the interlevel dielectric to the drain junction of the active transistor and the at least a portion of the trench capacitor between the active and passive transistors, wherein the first conductive contact electrically connects the trench capacitor to the drain junction of the active transistor.

主权项

1. An integrated circuit comprising:
an active transistor laterally adjacent to a trench capacitor formed in a semiconductor substrate, the active transistor comprising a source junction and a drain junction, wherein a barrier layer is disposed along a periphery of the trench capacitor for isolating the trench capacitor; a passive transistor laterally spaced from the active transistor, wherein at least a first portion of the trench capacitor is interposed between the active and passive transistors, and a second portion of the trench capacitor is recessed below the first portion; an insulation layer disposed upon the semiconductor substrate, wherein the trench capacitor extends through the insulation layer; an insulation structure disposed upon one portion of the insulation layer and a semiconductive layer disposed upon another portion of the insulation layer, wherein the passive transistor resides upon the insulation structure and the active transistor resides upon and within the semiconductive layer, and wherein the insulation structure is also in contact with both top and sidewall surfaces of a capacitor electrode material of the trench capacitor; an interlevel dielectric disposed upon the active and passive transistors; and a first conductive contact extending through a single opening in the interlevel dielectric to a top surface of the drain junction of the active transistor and to a top surface of the at least a first portion of the trench capacitor between the active and passive transistors, wherein the first conductive contact electrically connects the trench capacitor to the drain junction of the active transistor at the top surfaces thereof.