发明名称 PLASMA REACTOR AND SUBSTRATE PROCESSING SYSTEM
摘要 <p>PURPOSE: A plasma reactor and a substrate treatment system including the same are provided to carry out more accurate edge treatment by a movable annular baffle member and an annular plasma generator. CONSTITUTION: A plasma reactor comprises a chamber housing(12), an annular baffle member(20), and an annular plasma generator. The chamber housing includes a substrate support in which a target substrate is placed. The annular baffle member is arranged in a first location in order to divide the space above the target substrate into inner and outer areas. The annular plasma generator generates annular plasma along the perimeter of the target substrate in the outer area during an edge treatment process.</p>
申请公布号 KR101484273(B1) 申请公布日期 2015.01.20
申请号 KR20080065749 申请日期 2008.07.07
申请人 发明人
分类号 H01L21/205;H01L21/3065 主分类号 H01L21/205
代理机构 代理人
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