Inspecting apparatus and inspecting method

摘要

Provided is a method wherein a multi-anode detector is used for the purpose of detecting scattered light from a wafer, data obtained from the detector (multi-anode) for detecting defects is used, the shape of a beam radiated to the wafer, a rotational shift between the radius direction and the beam long side, and the like are calculated, and the optical axis of the irradiation beam is adjusted. Furthermore, the method is provided with a technique which feeds back the correction quantities for rotation and amplitude to inspection signal data, on the basis of the correction data, and corrects inspection data. Since fine correction with the adjustment of an optics system and signal processing is made possible, positional accuracy of defect inspection and accuracy of defect level (defect size) are improved.

主权项

1. An inspecting apparatus which inspects a substrate, comprising:
a transfer system which moves a substrate; an irradiation optics system which irradiates the substrate with first light of an elliptical shape, a length of the first light in a long side direction on the substrate being longer than a scanning pitch of the transfer system; a multi-anode detection system which detects second light from the substrate, a length of detection elements of the multi-anode detection system being longer than a length of the second light in a long side direction on a detection surface of the multi-anode detection system; and an adjustment unit which adjusts an optical axis of the first light using a detection result of the multi-anode detection system.