发明名称 | Process and device for producing at least one photonic component | ||
摘要 | A process for producing at least one photonic component (32, 33, 35, 39, 41), includes inserting the photonic component (32, 33, 35, 39, 41) into a surface layer (12) of a semiconductor wafer and/or within a semiconductor wafer, especially of a semiconductor chip (11, 31, 34, 38, 40) for the simpler and more cost-effective production with the most desired possible three-dimensional structures. At least one laser beam (22) is coupled into the material of the surface layer (12) and/or of the semiconductor wafer, in which the laser beam (22) is focused at a predetermined depth in the material. At least one property of the material and/or the material structure is changed in the area of focus (23, 36). | ||
申请公布号 | US8937024(B2) | 申请公布日期 | 2015.01.20 |
申请号 | US201213623509 | 申请日期 | 2012.09.20 |
申请人 | BIAS Bremer Institut für angewandte Strahltechnik GmbH | 发明人 | Bergmann Ralf;Bülters Mike;Sreenivas Vijay Vittal Parsi |
分类号 | H01L21/263;G02B6/13;H01L21/66;B23K26/00;H01L27/146;G02B6/138;G02B5/18;G02B6/122 | 主分类号 | H01L21/263 |
代理机构 | McGlew and Tuttle, P.C. | 代理人 | McGlew and Tuttle, P.C. |
主权项 | 1. A process for producing at least one photonic component in a surface layer of a semiconductor wafer or semiconductor chip and/or within the semiconductor wafer or semiconductor chip, the process comprising the steps of: coupling at least one laser beam into material of the surface layer and/or material layer of the semiconductor wafer or the semiconductor chip; focusing the laser beam at a predetermined depth in the material; changing at least one property of the material and/or a material structure of the material in an area of the focus, wherein in the area of focus a material hole is produced and/or a grid structure of the material is changed and crystalline silicon or monocrystalline silicon in the area of focus is converted into amorphous silicon and/or into a mixed phase between crystalline and amorphous silicon; inserting a photonic component into the material below and/or above a circuit layer of the semiconductor wafer or semiconductor chip, said circuit layer comprising one of a completely produced integrated circuit and a partially produced integrated circuit; and using an image recognition means for recognizing circuits of the circuit layer. | ||
地址 | Bremen DE |