发明名称 Process and device for producing at least one photonic component
摘要 A process for producing at least one photonic component (32, 33, 35, 39, 41), includes inserting the photonic component (32, 33, 35, 39, 41) into a surface layer (12) of a semiconductor wafer and/or within a semiconductor wafer, especially of a semiconductor chip (11, 31, 34, 38, 40) for the simpler and more cost-effective production with the most desired possible three-dimensional structures. At least one laser beam (22) is coupled into the material of the surface layer (12) and/or of the semiconductor wafer, in which the laser beam (22) is focused at a predetermined depth in the material. At least one property of the material and/or the material structure is changed in the area of focus (23, 36).
申请公布号 US8937024(B2) 申请公布日期 2015.01.20
申请号 US201213623509 申请日期 2012.09.20
申请人 BIAS Bremer Institut für angewandte Strahltechnik GmbH 发明人 Bergmann Ralf;Bülters Mike;Sreenivas Vijay Vittal Parsi
分类号 H01L21/263;G02B6/13;H01L21/66;B23K26/00;H01L27/146;G02B6/138;G02B5/18;G02B6/122 主分类号 H01L21/263
代理机构 McGlew and Tuttle, P.C. 代理人 McGlew and Tuttle, P.C.
主权项 1. A process for producing at least one photonic component in a surface layer of a semiconductor wafer or semiconductor chip and/or within the semiconductor wafer or semiconductor chip, the process comprising the steps of: coupling at least one laser beam into material of the surface layer and/or material layer of the semiconductor wafer or the semiconductor chip; focusing the laser beam at a predetermined depth in the material; changing at least one property of the material and/or a material structure of the material in an area of the focus, wherein in the area of focus a material hole is produced and/or a grid structure of the material is changed and crystalline silicon or monocrystalline silicon in the area of focus is converted into amorphous silicon and/or into a mixed phase between crystalline and amorphous silicon; inserting a photonic component into the material below and/or above a circuit layer of the semiconductor wafer or semiconductor chip, said circuit layer comprising one of a completely produced integrated circuit and a partially produced integrated circuit; and using an image recognition means for recognizing circuits of the circuit layer.
地址 Bremen DE