发明名称 Semiconductor manufacturing apparatus
摘要 Provided is a semiconductor manufacturing apparatus including an atmospheric transfer device capable of suppressing corrosion of a part without having a corrosion resistant part and, also, capable of taking anti-corrosion measures in a cost effective way. The semiconductor manufacturing apparatus 100, installed in a clean room, includes an atmospheric transfer device 116; an atmospheric transfer chamber 108 for accommodating the atmospheric transfer device 116; a cover member 118 for separating a part of the atmospheric transfer device 116 from the atmospheric transfer chamber 108; and a gas exhaust unit 120 that adjusts a region 119 enclosed by the cover member 118 to have a lower pressure than that of the atmospheric transfer chamber 108. Here, the cover member 118 is made of a corrosion resistant material or an anti-corrosion treatment may be performed on the cover member.
申请公布号 US8936507(B2) 申请公布日期 2015.01.20
申请号 US201012909996 申请日期 2010.10.22
申请人 Tokyo Electron Limited 发明人 Sato Fumiaki
分类号 F23J11/00;H01L21/677 主分类号 F23J11/00
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A semiconductor manufacturing apparatus installed in a clean room, the apparatus comprising: an atmospheric transfer device; an atmospheric transfer chamber for accommodating the atmospheric transfer device; a cover member for separating a part of the atmospheric transfer device from the atmospheric transfer chamber; and a gas exhaust unit that adjusts a region enclosed by the cover member to have a lower pressure than that of the atmospheric transfer chamber, wherein the cover member is made of a corrosion resistant material or an anti-corrosion treatment is performed on the cover member, the atmospheric transfer device includes a pick for holding a substrate, and the cover member is configured to enclose only the part of the atmospheric transfer device, which is positioned below the pick, without enclosing the pick, and configured to separate the pick from the part of the atmospheric transfer device, such that the part of the atmospheric transfer device is suppressed from being corroded by a corrosive gas released from the substrate, a space is provided between the cover member and the atmospheric transfer device, the space having a labyrinth structure sufficient to maintain a pressure difference between the region enclosed by the cover member and the atmospheric transfer chamber, the atmospheric transfer device partly enclosed by the cover member is movable in a horizontal direction within the atmospheric transfer chamber, and the gas exhaust unit is vertically connected to a bottom of the cover member, wherein an upper portion of the cover member has a first protrusion which is protruded from a side surface of the upper portion toward said space, the atmospheric transfer device has a second protrusion which is protruded toward said space, and the first protrusion and the second protrusion form a flow path through the labyrinth structure extending in a horizontal direction.
地址 Tokyo JP