| 摘要 |
PURPOSE:To prevent the occurrence of scum or insufficient resolution at the time of forming a high-resolution resist pattern by using standing waves or exposing light having a short wavelength by developing the resist pattern by exposing the resist of the pattern to the vapor of a solvent which dissolves the resist after exposing the resist. CONSTITUTION:A resist material composed of a PHS resin is dissolved in an ECA solvent and a resist film 2 is formed on a wafer 1 by applying the solution to the surface of the wafer 1 and baking the applied solution. Then the film 2 is exposed in the state of a matrix through a reticle by using a reduction stepper. After exposure, a solvent evaporating process is performed at 40 deg.C for two minutes while the wafer 1 is PUT on a hot plate in an atmosphere saturated with ECA vapor in a custom chamber. Thereafter, desolvating baking, development, and post-baking are performed. Therefore, the occurrence of scum and insufficient resolution can be prevented even when a high-resolution resist pattern is formed by using exposing light having a short wavelength. |
