发明名称 ELECTRICAL CONNECTION METHOD BETWEEN SEMICONDUCTOR CHIPS
摘要 PURPOSE: To provide an electric connecting method having through conductors in even thickness and height by nickel plating a copper wire formed on insulating layers. CONSTITUTION: When first patterned metal layers 25, 28 are immersed in a bath 45 containing nickel ions, a second nickel-containing metal layer 29 is formed on the first patterned metal layers 25, 28 by the quasi-nonelectroless and nonelectrodeposition plating process physically bringing the first patterned metal layers 25, 28 into contact with an expanded metal layer 14 connected to the power supply previously formed underneath the first patterned metal layers 25, 28. Furthermore, the second insulating layer 30 is formed on the metal layers 25, 28 and the first insulating layers 11, 12 further to form an aperture part 31 on a specific part of said metal layers 25, 28 so that the second metal layer 29 may be filled up with the third nickel-containing metal layer 31 in the aperture part of the second insulating layer 30.
申请公布号 JPH0684832(A) 申请公布日期 1994.03.25
申请号 JP19920354735 申请日期 1992.12.17
申请人 AMERICAN TELEPH & TELEGR CO <ATT> 发明人 RICHIYAADO ESU BENSON;JIERII JIEI RUBIN;FURANKU SUTEPUNIKU
分类号 C23C18/52;H01L21/288;H01L21/768;(IPC1-7):H01L21/288;H01L21/90 主分类号 C23C18/52
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