Semiconductor devices having improved gate height uniformity and methods for fabricating same

摘要

Semiconductor devices and methods for fabricating semiconductor devices are provided. In an embodiment, a method for fabricating a semiconductor device includes forming on a semiconductor surface a temporary gate structure including a polysilicon gate and a cap. A spacer is formed around the temporary gate structure. The cap and a portion of the spacer are removed. A uniform liner is deposited overlying the polysilicon gate. The method removes a portion of the uniform liner overlying the polysilicon gate and the polysilicon gate to form a gate trench. Then, a replacement metal gate is formed in the gate trench.

主权项

1. A method for fabricating a semiconductor device comprising:
forming over a semiconductor surface a temporary gate structure including a gate and a cap; forming a spacer around the gate; removing the cap and a portion of the spacer to define an exposed surface of the gate; depositing a first insulator over the uniform liner; depositing a uniform liner on the exposed surface of the gate; removing a portion of the uniform liner overlying the gate and the gate to form a gate trench; planarizing the first insulator to the uniform liner before removing the portion of the uniform liner and the gate to form the gate trench; recessing the planarized first insulator; depositing a second insulator over the recessed first insulator; planarizing the second insulator to the uniform layer; and forming a replacement metal gate in the gate trench.