SEMICONDUCTOR DEVICE

摘要

The purpose of the present invention is to provide a semiconductor device in which power consumption is suppressed small. The semiconductor device comprises; a first wire wherein a first potential is supplied; a second wire wherein a second potential which is higher than the first potential is supplied; a third wire wherein a third potential which is higher than the second potential is supplied; a fourth wire wherein a first clock signal in which a fourth potential which is higher than or equal to the third potential and the second potential are repeated in regular sequence is supplied; first and second transistors having the same polarity; and a circuit which controls the electrical connection between a gate of the first transistor or a gate of the second transistor and the first wire or the third wire according to an input signal (Vin) and a second clock signal wherein the first potential and the third potential are repeated in regular sequence. One side of the source and drain of the first transistor electrically is connected to the second wire. One side of the source and drain of the second transistor is electrically connected to the fourth wire. The other side of the source and drain of the first transistor is electrically connected to the other side of the source and drain of the second transistor.