Thin film transistor, thin film transistor array substrate and method of fabricating the same

摘要

A method of fabricating a thin film transistor includes sequentially forming a first metal layer on a substrate and a second metal layer of copper on the first metal layer; performing a plasma process to form a copper nitride layer on the second metal layer; patterning the copper nitride layer, the second metal layer and the first metal layer to form a gate electrode; forming a first gate insulating layer of silicon nitride on the substrate including the gate electrode; forming a second gate insulating layer of silicon oxide on the first gate insulating layer; forming a semiconductor layer on the second gate insulating layer formed of an oxide semiconductor material; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode spaced apart from the drain electrode.

主权项

1. A thin film transistor, comprising:
a gate electrode on a substrate, wherein the gate electrode includes a first layer formed of copper and a second layer formed of copper nitride on the first layer; a gate insulating layer including a first gate insulating layer formed of silicon nitride and a second gate insulating layer formed of silicon oxide, wherein the first gate insulating layer is disposed on and contacts the gate electrode, and the second gate insulating layer is disposed on the first gate insulating layer; a semiconductor layer formed of an oxide semiconductor material on the second gate insulating layer; an etch-stopper layer formed on the semiconductor layer; and a source electrode and a drain electrode formed on the etch-stopper layer and spaced apart from each other.