发明名称 Structures and methods for high-efficiency pyramidal three-dimensional solar cells
摘要 The present disclosure enables high-volume cost effective production of three-dimensional thin film solar cell (3-D TFSC) substrates. First, the present disclosure discloses pyramid-like unit cell structure 16 and 50 which enable epitaxial growth through their open pyramidal structure. The present disclosure than gives four 3-D TFSC embodiments 70, 82, 100, and 110 which may combined as necessary. A basic 3-D TFSC having a substrate, emitter, oxidation on the emitter, front and back metal contacts allows simple processing. Other embodiments disclose a selective emitter, selective backside metal contact, and front-side SiN ARC layers. Several processing methods including process flows 150, 200, 250, 300, and 350 enable production of these 3-D TFSC. Further, the present disclosure enables higher throughput through the use of dual sided template 400. By processing the substrate in the template, the present disclosure increases yield and reduces processing steps.
申请公布号 US8937243(B2) 申请公布日期 2015.01.20
申请号 US200912615383 申请日期 2009.11.10
申请人 Solexel, Inc. 发明人 Kapur Pawan;Moslehi Mehrdad M.
分类号 H01L31/0352;H01L31/0224;H01L31/068;H01L31/18;H01L31/0236 主分类号 H01L31/0352
代理机构 代理人
主权项 1. A pyramidal three-dimensional thin film solar cell (3-D TFSC) having enhanced processing properties, comprising: a p-type epitaxial 3-D TFSC substrate comprising a plurality of pyramidal unit cells, wherein said unit cells comprise: tapered sidewalls having different crystallographic planes including the <111> plane, said tapered sidewalls forming an open pyramid-like structure;a substantially flat top-ridge having a crystallographic <100> plane, said top-ridge associated with said tapered sidewalls; andsaid tapered sidewalls having a backside surface; and said 3-D TFSC substrate further comprising a back P+ doped layer; a single phosphorous diffusion emitter layer formed in said tapered sidewalls and said top-ridge; an oxide passivation layer formed on said emitter layer, said oxide passivation layer formed on said tapered sidewalls; a blanket metal contact layer formed on said back surface; and front metal contacts formed on said emitter layer, said front metal contacts formed on said top-ridge.
地址 Milpitas CA US