| 发明名称 | Non-volatile memory | ||
| 摘要 | A non-volatile memory is provided. The non-volatile memory includes a oxide and polysilicon stack structure and charge storage layers. The oxide and polysilicon stack structure is disposed on a substrate. There are recesses in the substrate at two sides of the oxide and polysilicon stack structure. The oxide and polysilicon stack structure includes an oxide layer and a polysilicon layer. The oxide layer is disposed on the substrate, wherein there is an interface between the oxide layer and the substrate. The polysilicon layer is disposed on the oxide layer. The charge storage layers are disposed in the recesses and extend to a side wall of the oxide and polysilicon stack structure, and a top surface of each of the charge storage layers is higher than the interface. | ||
| 申请公布号 | US8937347(B2) | 申请公布日期 | 2015.01.20 |
| 申请号 | US201414266079 | 申请日期 | 2014.04.30 |
| 申请人 | MACRONIX International Co., Ltd. | 发明人 | Wu Guan-Wei;Yang I-Chen;Chang Yao-Wen;Lu Tao-Cheng |
| 分类号 | H01L21/4763;H01L29/792;H01L29/66 | 主分类号 | H01L21/4763 |
| 代理机构 | J.C. Patents | 代理人 | J.C. Patents |
| 主权项 | 1. A non-volatile memory, comprising: an oxide and polysilicon stack structure, disposed on a substrate, wherein there are recesses in the substrate at two sides of the oxide and polysilicon stack structure, the oxide and polysilicon stack structure comprising: an oxide layer, disposed on the substrate, wherein there is an interface between the oxide layer and the substrate; anda polysilicon layer, disposed on the oxide layer; and charge storage layers, disposed in the recesses and extend to a side wall of the oxide and polysilicon stack structure, and a top surface of each of the charge storage layers is higher than the interface. | ||
| 地址 | Hsinchu TW | ||