Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes: a mounting substrate; a semiconductor light emitting element; a first resin; and a second resin. The semiconductor light emitting element includes: a semiconductor layer including a light emitting layer; a p-side electrode; a p-side interconnection unit; an n-side electrode; and an n-side interconnection unit. The first resin covers a periphery of the semiconductor light emitting element on the substrate and contains a phosphorescent substance capable of being excited by emission light of the light emitting layer. The second resin is provided on the first resin layer and the semiconductor light emitting element and contains a fluorescent body capable of being excited by emission light of the light emitting layer to emit light of a different peak wavelength from emission light of the light emitting layer.

主权项

1. A semiconductor light emitting device comprising:
a mounting substrate having a mounting surface; a plurality of semiconductor light emitting elements disposed on the mounting surface, each of the plurality of semiconductor light emitting elements comprising:
a semiconductor layer including a light emitting layer;a p-side electrode connected to the semiconductor layer;a p-side interconnection unit;an n-side electrode connected to the semiconductor layer; andan n-side interconnection unit; a first resin provided on the mounting surface between adjacent ones of the plurality of semiconductor light emitting elements, the first resin containing a phosphorescent substance capable of being excited by emission light of the light emitting layer; and a second resin provided on the first resin and the plurality of semiconductor light emitting elements, the second resin containing a fluorescent body capable of being excited by the emission light of the light emitting layer.