发明名称 Semiconductor device
摘要 A semiconductor device including a capacitor with increased charge capacity and having a high aperture ratio and low power consumption is provided for a semiconductor device including a driver circuit. The semiconductor device includes a driver circuit which includes a first transistor including gate electrodes above and below a semiconductor film so as to overlap with the semiconductor film; a pixel which includes a second transistor including a semiconductor film; a capacitor which includes a dielectric film between a pair of electrodes in the pixel; and a capacitor line electrically connected to one of the pair of electrodes. In the semiconductor device, the gate electrode over the semiconductor film of the first transistor is electrically connected to the capacitor line.
申请公布号 US8937307(B2) 申请公布日期 2015.01.20
申请号 US201313951497 申请日期 2013.07.26
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei
分类号 H01L27/06;H01L27/07;H01L27/12 主分类号 H01L27/06
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A semiconductor device comprising: a driver circuit which includes a first transistor including a first semiconductor film and a gate electrode; a pixel which includes a capacitor including a dielectric film between a pair of electrodes; and a capacitor line electrically connected to the gate electrode and one of the pair of electrodes.
地址 Kanagawa-ken JP