| 摘要 |
<p>The present invention relates to a method for removing a scallop of a semiconductor device and a semiconductor device manufactured by using the same, and more particularly, to a method for removing a scallop of a semiconductor device, in which plasma is generated by using ozone to increase an oxidation rate of a Si substrate, and a scallop characteristic is improved by utilizing a directional oxidation technology through a combination of a pulse feeding manner and substrate bias, thereby improving reliability of the device, and to a semiconductor device manufactured by using the same. According to the present invention, the method for removing the scallop of the semiconductor device comprises steps of: depositing a hard mask oxide and an exposure layer and performing a Si etching or SiC etching process to form a hole or trench in a Si substrate or a SiC substrate; oxidizing a scallop formed on a sidewall of the hole or trench by using ozone to form an oxide on a surface of the scallop; and selectively etching the oxide to remove the scallop.</p> |
