SEMICONDUCTOR ASSEMBLY AND METHOD OF MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a monolithically integrated semiconductor assembly and a method of manufacturing the same.SOLUTION: A semiconductor assembly 100 includes a substrate 110 including silicon carbide (SiC), and a gallium nitride (GaN) semiconductor device 120 is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure 130 fabricated in or on the substrate, where the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage.