| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of a multilayer protective film from which a dehydrogenation process can be eliminated.SOLUTION: When forming a gate protective film 31 or a passivation layer 35, which is in contact with a channel 32 composed of IGZO and has silicon nitride films 31a, 35b and silicon oxide films 31b, 35a, the silicon oxide films 31b, 35a are deposited using silicon chloride gas and oxygen gas not containing a hydrogen atom, the silicon nitride films 31a, 35b are deposited using silicon chloride gas and nitrogen-containing gas not containing a hydrogen atom, and deposition of the silicon oxide films 31b, 35a, and deposition of the silicon nitride films 31a, 35b are performed continuously. |
