| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor device having a stable gain across a broad frequency band.SOLUTION: In a semiconductor device, by providing a shield plate electrode 15 on an insulation layer 14 between a drain electrode 12 and a gate electrode 13 so as to cover the drain electrode 12 in a semiconductor substrate part 2, and connecting the shield plate electrode 15 with a source electrode 11 by a conductor surface 17 provided in a cap substrate 3 mounted on a top face of the semiconductor substrate part 2, and providing a clearance 18 on the gate electrode 13 and between the gate electrode 13 and the conductor surface 17, parasitic capacitance Cdg between the drain and gate and parasitic capacitance Cgs between the gate and source, which become an unstable factor of a gain are reduced.</p> |
