| 摘要 |
<p>PURPOSE: A thin film transistor and a manufacturing method thereof are provided to improve the uniformity by controlling the number of a crystal protrusion formed on a semiconductor layer of a thin film transistor and reducing the degree of scattering between thin film transistors. CONSTITUTION: A thin film transistor comprises a substrate, a semiconductor layer, and a first and a second gate electrode. The semiconductor layer comprises a source / drain region and channel region(122) and is located on the substrate. The first and the second gate electrode are arranged in order to be overlapped with the semiconductor layer. A channel region comprises a first and second channel region which are overlapped with the first and second gate electrode and comprises a conductive region which is not overlapped with the first and second gate. The first channel area is arranged to cross each other with the second channel region.</p> |
