发明名称 |
VAPOR GROWTH DEVICE AND VAPOR GROWTH METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a vapor growth device which reduces particles by preventing a reaction product of process gas and halogen-based gas from being generated.SOLUTION: The vapor growth device comprises: a reaction chamber for depositing a nitride; a first gas supply path for supplying halogen-based gas; a second gas supply path for supplying ammonia gas; a gas channel which is disposed in an upper part of the reaction changer and in which halogen-based gas is supplied from the first gas supply path to the reaction chamber; a shower plate for supplying gas into the reaction chamber while separating the gas channel supplying ammonia gas from the second gas supply path; and a support part which is provided at a lower side of the shower plate within the reaction chamber, and in which a substrate can be mounted. |
申请公布号 |
JP2015012274(A) |
申请公布日期 |
2015.01.19 |
申请号 |
JP20130139086 |
申请日期 |
2013.07.02 |
申请人 |
NUFLARE TECHNOLOGY INC |
发明人 |
YAMADA TAKUMI;SATO YUSUKE |
分类号 |
H01L21/205;C23C16/44;H01L21/31 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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