发明名称 VAPOR GROWTH DEVICE AND VAPOR GROWTH METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor growth device which reduces particles by preventing a reaction product of process gas and halogen-based gas from being generated.SOLUTION: The vapor growth device comprises: a reaction chamber for depositing a nitride; a first gas supply path for supplying halogen-based gas; a second gas supply path for supplying ammonia gas; a gas channel which is disposed in an upper part of the reaction changer and in which halogen-based gas is supplied from the first gas supply path to the reaction chamber; a shower plate for supplying gas into the reaction chamber while separating the gas channel supplying ammonia gas from the second gas supply path; and a support part which is provided at a lower side of the shower plate within the reaction chamber, and in which a substrate can be mounted.
申请公布号 JP2015012274(A) 申请公布日期 2015.01.19
申请号 JP20130139086 申请日期 2013.07.02
申请人 NUFLARE TECHNOLOGY INC 发明人 YAMADA TAKUMI;SATO YUSUKE
分类号 H01L21/205;C23C16/44;H01L21/31 主分类号 H01L21/205
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