| 摘要 |
PROBLEM TO BE SOLVED: To attain a better phase difference detection accuracy.SOLUTION: A solid state image sensor includes a plurality of pixels each having a photoelectric conversion part for generating charges by photoelectric conversion of light, and a transistor for reading a pixel signal having a level depending on the charges generated in the photoelectric conversion part. Phase difference pixels, i.e., at least some pixels out of the plurality of pixels, are formed by subdividing the photoelectric conversion part into a plurality of photoelectric conversion parts, and is constituted by embedding an insulated light shielding film in an area where the plurality of subdivided photoelectric conversion parts are separated from each other. The technique is applicable to a CMOS image sensor, for example. |
